中英
1
光刻胶的英文
发音:
- 英文翻译
- 造句
- optical resist
- photosensitive resist
- 光刻 photoetching
- 胶 glue; gum
- 多层光刻胶 multilevel resist
- 负型光刻胶 negative photoresist
- 固体光刻胶 solid photoresist
- 光刻胶剥离 photoresist lift off
- 光刻胶附着 resist adhesion
- 光刻胶膜 photoresist film
- 光刻胶掩蔽 photoresist masking
- 射线光刻胶 x ray resist
- 涂光刻胶 resist coating
- 无机光刻胶 inorganic resist
- 掩蔽光刻胶 masking photoresist
- 液体光刻胶 liquid photoresist
- 正性光刻胶 positive image material; positive photoresist; ppr
- x射线光刻胶 x ray resist
- 非溶性光刻胶 insoluble photoresist
- 高灵敏光刻胶 fast resist
- 光刻胶断面图 resist profile
- 光刻胶灵敏度 resist speed
- 光刻胶配量器 resist dispenser unit
- 光刻胶完整性 photoresist integrity
- 光刻胶显影剂 photoresist developer
- 聚合物光刻胶 polymeric resist; polymerized photoresist
- 卤化物光刻胶 halide photoresist
- Fabrication technology of microlens array by melting photoresist
微透镜阵列的光刻胶热熔制作技术 - Evaluating safelights for photoresists
光刻胶安全灯的评价 - X ray resist x
射线光刻胶 - Actuality and development of ultra - clean and high pure chemical reagents and photoresists in china
我国超净高纯试剂和光刻胶的现状与发展 - By digitization , we optimize the intensity data of the incidence beam at the vicinity of start point and end point . 3
通过选择合适的涂胶参数，在凹透镜表面上进行了薄光刻胶胶层的均匀涂布。 - Alignment insures that a new pattern being added to a wafer is aligned to the previous pattern or patterns on the wafer
对准之后，当照射光通过掩模的透明区域时，晶片上对辐射敏感的光刻胶曝光。 - With the third harmonic 355nm nd : yag laser as the exposal source , the lithography of su - 8 photoresist is studied
本文采用波长为355nm的三倍频nd : yag激光作为曝光光源,对su - 8光刻胶进行光刻研究。 - In microelectronics , the process of removing material , on a chip , left exposed by the exposure and development of the photoresist
在微电子技术中,通过曝光并显影光刻胶除去芯片上的物质露出剩馀部分的工艺。 - Lin h , li l and zeng l . , " in - situ end - point detection during ion - beam etching of multilayer dielectric gratings " , chin . opt . lett . , 3 ( 2 ) , 63 ( 2005 )
林华, "介质膜光栅:光刻胶掩模占宽比和离子束刻蚀槽深的监控" ,博士论文,导师:李立峰( 2006 ) - We demonstrate experimentally the technique to fabricate large does in the thick film on a concave lens ( mirrors ) surface with precise alignment by using the strategy of exposure twice
采用两次曝光的方法在凹透镜表面上厚光刻胶中制作衍射光学元件。
光刻胶（），亦称为光阻或光阻剂，是指通过紫外光、深紫外光、电子束、离子束、X射线等光照或辐射，其溶解度发生变化的耐蚀刻薄膜材料，是光刻工艺中的关键材料，主要应用于集成电路和半导体分立器件的细微图形加工。
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Last modified time:Thu, 14 Aug 2025 00:29:56 GMT
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