光刻胶的英文

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英文翻译
造句

optical resist
photosensitive resist

光刻 photoetching
胶 glue; gum
多层光刻胶 multilevel resist
负型光刻胶 negative photoresist
固体光刻胶 solid photoresist
光刻胶剥离 photoresist lift off
光刻胶附着 resist adhesion
光刻胶膜 photoresist film
光刻胶掩蔽 photoresist masking
射线光刻胶 x ray resist
涂光刻胶 resist coating
无机光刻胶 inorganic resist
掩蔽光刻胶 masking photoresist
液体光刻胶 liquid photoresist
正性光刻胶 positive image material; positive photoresist; ppr
x射线光刻胶 x ray resist
非溶性光刻胶 insoluble photoresist
高灵敏光刻胶 fast resist
光刻胶断面图 resist profile
光刻胶灵敏度 resist speed
光刻胶配量器 resist dispenser unit
光刻胶完整性 photoresist integrity
光刻胶显影剂 photoresist developer
聚合物光刻胶 polymeric resist; polymerized photoresist
卤化物光刻胶 halide photoresist

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例句与用法

Extreme ultraviolet lithography is being developed as one of the most important candidates to fabricate a sub - o . lum - pattern . in recent years , several key technologies have been developed rapidly such as laser producing plasma source , extreme ultraviolet multilayer , optical fabrication and metrology , projection - camara alignment , low - defect mask and control technology of stage
极紫外投影光刻( extremeultravioletlithography简称euvl )最有可能成为下一世纪生产线宽小于0 . 1 m集成电路的技术，近年来在激光等离子体光源、极紫外多层膜、光学加工和检测、光学精密装调、低缺陷掩模、光刻胶技术以及高稳定工作台系统控制等关键技术方面得到了飞速发展。
Abstract : a new method for determining proximity parameters , , and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians . a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist . furthermore , the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions
文摘:在电子散射能量沉积为双高斯分布的前提下,提出了一种提取电子束光刻中电子散射参数,和的新方法.该方法使用单线条作为测试图形.为了避免测定光刻胶的显影阈值,在实验数据处理中使用归一化方法.此外,用此方法提取的电子散射参数被成功地用于相同实验条件下的电子束临近效应校正
According to the different require of the phase mask , the holographic recording method for the design of linearly chirped phase mask is studied in this paper . the fringe formed by the interference of two spherical waves , whose density varies linearly with space , is used to record the chirped phase mask . the two design schemes proposed in this paper are analyzed and compared , and the experimental results are given
根据光纤光栅掩模的不同要求,研究讨论了用全息干涉方法制作线性啁啾位相掩模的设计方法,提出用两球面波干涉产生条纹密度随空间距离线性变化的干涉条纹记录啁啾位相光栅,分析比较了文中给出的两种设计方案,给出了实验验证结果,并且制作了线性啁啾光刻胶掩模。
Then some methods including optimizing the spectrum and intensity of 3w1 beam line and improving the performance of pmma were put in force , and pmma structure with aspect ratio 100 was obtained under these optimum conditions . moreover , such steps as controlling ph , electrodepositing , using activator and a second cathode , and mending the power supply were taken to solve a series of problems coming into being during electroforming process correspondingly , for example , air holes , inner stress , and ununiformity of deposition
并针对3w1光源中硬x光成分较多、光强和功率密度太高的特点，提出了用ni吸收膜改善光谱和用x光暂波器法优化光强的方法，同时严格控制和改善pmma光刻胶的性能，经过反复的计算分析和实验改进后，获得了深宽比高达100的胶结构图形。
The influences of recording conditions on the snr of the black - white digital images retrieved from fourier transform holograms were experimentally studied . the holograms were recorded on photoresist plates using an electrical addressed tft - lcslm as a data input device , and a normal ccd camera was applied for detecting reconstructed images
采用电寻址液晶空间光调制器作为存储系统的组页器，常规ccd探测器作为重构图像的检测器件，实验研究了在光刻胶干板上记录黑白二值条纹图像的傅里叶全息图时，记录条件对重构图像信噪比的影响。
Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool , reticule , resist exposure , development and etching , they are beneficial to develop a yield - driven layout design tool , the engineers could use it to automate the tasks of advanced mask design , verification and inspection in deep sub - micron semiconductor manufacturing
建立准确描述由于掩模制造工艺、光刻胶曝光、显影、蚀刻所引起的光学邻近效应和畸变所导致的关键尺寸变化的光刻工艺模型，有助于开发由成品率驱动的版图设计工具，自动地实现深亚微米下半导体制造中先进的掩模设计、验证和检查等任务。
The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed . etching characteristics of materials , including pr , cr , quartz , are investigated . the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy , ion beam density and ion incidence angle in pure ar and chf3 , respectively . the etch rate has shown a square root dependence on variation versus
深入研究了光刻胶、铬薄膜、石英等光学材料离子束刻蚀特性,分别以ar气和chf3为工作气体,研究光刻胶、铬薄膜、石英等的刻蚀速率随离子能量,束流密度和离子入射角度的变化关系,得到刻蚀速率与影响因素的拟合方程,为掩模的制作工艺路线提供了实验依据和理论指导。
In study of the laser - llga technique , we introduce and fabricate an adhering mask , in order to obtain a high transmission and high accuracy mask . furthermore , the experiment devices can be simplified by the use of this mask . during the study of uv - liga technology , twice spin - coat method for photoresist azp4903 is explored
在liga技术研究中提出了一次掩膜成型法，简化了工艺过程；在准分子激光刻蚀技术中，设计了附着式掩膜，提高了尺寸精度，简化了实验装置；在准liga技术中，摸索了azp4903光刻胶的两次涂胶方法，使结构高度超过100 m 。