memory n. 1.记忆;记忆力;【自动化】存储器;信息存储方式;存储量。 2.回忆。 3.纪念。 4.死后的名声,遗芳。 5.追想得起的年限[范围]。 artificial memory 记忆法。 retentive memory 良好的记忆力。 a translation memory (电子计算机的)译码存储器。 Keep your memory active. 好好记住,不要忘记。 It is but a memory. 那不过是往事而已。 bear [have, keep] in memory 记着,没有忘记。 beyond [within] the memory of man [men] 在有史以前[以来]。 cherish the memory of (sb.) 怀念(某人)。 come to one's memory 想起,忆及,苏醒。 commit to memory 记住。 from memory 凭记忆。 have a good [bad, poor, short] memory 记性好[坏]。 have no memory of 完全忘记。 If my memory serves me. 如果我的记性不错。 in memory of 纪念…。 of blessed [famous, happy, glorious] memory 故〔加在已死王公名上的颂词〕 (King Charles of blessed memory 已故查理王)。 slip sb.'s memory 被某人一时忘记。 to the best of one's memory 就记忆所及。 to the memory of 献给…〔著者书前纪念性题词〕。 within living memory 现在还被人记着。
The ultra high density bloch line memory ( blm ) scheme was proposed bykonish in 1983 . negative vertical bloch line ( vbl ) pairs in the walls of stripe domains aligned in parallel ( minor loops ) are used as information carries in blm . so , the study of the temperature stability of the vbl in the magnetic domain of garnet bubble is very important to the study of blm and the development of magnetic domain wall physics 并通过j . c . slonczewski所给出的vbl的平衡间距公式分析得出d畴壁中vbl间的平衡间距( s _ ( eq ) )随温度的升高而增大,这与以前人们所得到的ohb畴壁中vbl间平衡间距( s _ ( eq ) )随温度的升高而减小的结论不一致,并对此进行了分析。
In the last twenty years , extensive studies have been made on the structure , basic magnetic properties , interlayer coupling , interfacial structures and its relative effects in magnetic thin and ultrathin films due to their potential application in magnetic random access memory ( mram ) and ultrahigh - density data storage 随着在磁性随机存储器和超高密度存储技术中应用的不断拓展,近二十年来,磁性薄膜和超薄膜的结构、基本磁性、层间耦合、界面状况及其相关效应一直是人们研究的熟点和难点之一。