However , the die attach layer delaminated after 500 cycles and pcb cracked in the underfilled samples after long time cycling . c - sam is employed to investigate the delamination in the underfilled samples . highly concentrated stress - strain induced by the cte mismatch between the bga component and the pcb board , coarsened grain and two kinds of intermetallic compounds ( nisn / nisns ) which formed during reflow and thermal cycle and their impact on the reliability of solder joints are discussed in this paper 充胶样品粗化尤为严重; ? ni - sn金属间化合物包括两层:其中,靠近ni焊盘的那层比较平整,同时, eds结果分析表明其化学式近似为nisn ,而靠近焊料的那层呈板条状,化学式近似为nisn _ 3 ,文献表明其为亚稳相; ?充胶使得样品最大应力范围降了接近一个数量级并降低了dnp的作用,同时,器件失效模式变为芯片粘接层分层; ? c - sam结果表明本论文采用的充胶样品,芯片粘接层分层起始于500周左右,而经过2700周循环的样品,分层几乎扩展到整个界面。
Zhang liji ( material physics and chemistry ) directed by professor xie xiaoming this paper is intended to solve problems for those who are designing , using pbgas . failure mechanism , as well as cycles to failure of two groups of pbga samples ( with / without underfill ) for thermal cycling conditions in the range of - 40 ~ 125 , were presented . the experiment shows that solder ball in the samples without underfill cracked after 500 times cycle , no crack was found in the underfilled samples even after 2700 cycles 通过一系列的实验,得到以下实验结果: ?在本论文设定的温度循环条件下,未充胶pbga样品的热疲劳品寿命在500周左右,充胶样品的焊点寿命高于2700周; ?对于未充胶器件,中心距( dnp )是决定焊点应力、应变大小的最主要因素,裂纹总是从中心距较大处萌生并向中心处扩展; ?温度循环的过程中焊盘附近焊料组织明显粗化。
The na2fepo4f cathode materials for sodium ion battery were prepared by solid state reaction and the influence of synthesizing temperature and morphology on the electrochemical performance of na2fepo4f powders in sodium ion batteries were systematically studied . the results indicate that na2fepo4f synthesized at 750 exhibited good electrochemical performance , whose first specific discharge capacity is 60mah / g , after 20 times cycling , the average specific discharge capacity is 51 . 1mah / g 首先采用固相法制备了氟磷酸亚铁钠粉体,研究了不同煅烧温度对合成材料显微结构和电化学性能的影响,结果表明750下合成材料体现出较好的电化学性能,首次放电容量为60mah / g ,循环20次后,容量下降为51 . 1mah / g 。