逆相的英文

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英文翻译
造句

phase inversion

逆 contrary; counter
相 looks; appearance
反相，逆相 antiphase
逆相的 counter
逆相关 inverse correlation; inverse relationship; inversely related
逆相区 antiphase domain
逆相位 antiphase
逆相序 negative phase sequence
不逆相接 noninductive connection
可逆相变 reversible phase change; reversible transformation
逆相反馈 antiphase feedback
逆相分磁界 backward magnetic field
逆相互化 demutualization
逆相继电器 reverse-phase relay
逆相似性 inverse similarity
逆相似圆 circle of antisimilitude
逆相显示 inverse video
不可逆相变化 irreversible phase change
不可逆相转变 irreversible phase transition
逆相关反相关负相关 inversecorrelation
逆相位振幅特性 inverse phaseamplitude characteristic
剖面自相关逆相关记录 autoretroo
栅极接地放大器, 倒相器, 逆相放大器 inverted amplifier
逆线性最优控制 inverse linear optimal control
逆线性时不变系统 inverse lti system
逆线性色散 reciprocal linear dispersion

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例句与用法

5 ) as the deformation strain increases the reverse transformation temperature and thermal hystersis of tini film increase on the first heating , while the martensitic transformation temperature decreases and r phase transition temperature is constant
随预应变量增大， tint薄膜的第一次逆相变温度升高，相变热滞增大，马氏体相变温度降低， r相变温度无明显变化。
Determined by dsc . whereafter , the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ) , and the difference of morphology between the two sides is observed . it has been shown that , in the growing surface of sputtered tini film , the trend of grain to accumulating along the normal direction like a column is clearly observed , and the grain is very loose which resulted in more microcavities , but in the surface facing to glass substrate , grain is so compact that there are hardly microcavities
通过溅射法，在玻璃衬底上淀积了tini薄膜，并在600进行了真空退火， dsc法测得其马氏体逆相变峰值温度为75 ，利用原子力显微镜，对玻璃基tini形状记忆合金薄膜的衬底面与生长面进行了表面微观形貌分析，发现：生长面晶粒呈现出沿薄膜法线方向柱状堆积的趋势，晶粒致密性差，微孔洞多；而衬底面晶粒致密，几乎没有微孔洞存在。
In succession , tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering , and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber . in addition , the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ) , and the ti content in the film is approximately 51at %
按照改进的工艺参数，在单晶硅衬底上溅射-淀积了tini薄膜，并进行了超高真空退火， dsc法测得其马氏体逆相变峰值温度为72 ，利用能谱分析( eds )技术测得其ti含量约为51at ，通过对非晶tini薄膜与单晶硅衬底之间的界面进行eds及x射线衍射( xrd )分析，发现在用大功率( 2000w )直流磁控溅射法制备tini薄膜过程中，存在ti 、 ni与si的双向扩散，发生了界面反应，并有三元化合物ni _ 3ti _ 2si生成。
The structure and cycling properties of o2 - type products were studied too . the results proved that the material remained layered and did not transform to the spinal structure during cycling when it was cycled in 2 . 2 - 4 . 2v , it occurred irreversible phase transformation only when it further discharged to 1 . 0v . the granularity , shape and density of the grain were also studied
本论文对合成的o2相材料进行了结构和循环过程研究，结果表明具有o2相结构的材料在2 . 2 - 4 . 2v之间循环时不发生相变，即使在循环10次后仍能够保持稳定的o2相层状结构，只有当电极放电至1 . 0v以下时，才会发生不可逆相变。
This paper uses multi - layer feedforward artificial neural networks ( abbr . mlf nns ) to approximate the nonlinear dynamic inversion on the basis of analyzing principle and characteristics of nonlinear dynamic inversion and neural networks . the pseudo - linear system has been synthesized by classic pid control and self - adaptive control separately
将神经网络与非线性动态逆相结合，利用神经网络对系统的逆模型进行建模，对实现的伪线性系统分别设计pid控制和自适应控制两种方案进行综合。
This paper describes mainly system functions , measuring methods , circuit design , software program and errors analysis of a new type of measuring instrument . this instrument can measure and monitor electric parameters in single - phase circuits , three - phase ( three - wire or four - wire ) circuits . this system can be applied to electric devices and power plants , transformer substations with harmonic pollution . it can measure current , voltage , power , energy , frequence , power factor etc . it also can detect load quality , phase sequence , alarm , display and print results , as well as detect and dispose negative power
该仪器适用于含有谐波污染情况下的机电设备现场、发电厂、供电局、企业变电所现场，可用来测量电流、电压、有功功率、无功功率、视在功率、有功电能、无功电能、视在电能以及频率和功率因数等电参数，并具有负载性质（感性、容性）判别，正、逆相序判别指示功能；超限报警功能；打印记录功能和负功检测及处理功能。
By differential scanning calorimetry ( dsc ) , respectively . without any supplementary method , a ti - rich alloy target ( ti - 48at % ni ) were used to enrich ti content in films during sputtering . as the first step , tini thin film is deposited on a glass substrate by sputtering , and annealed at 600
采用丝材冷轧法，制备了75 m 、 90 m两种厚度的tini形状记忆薄膜，示差扫描量热( dsc )法测得其马氏体逆相变峰值温度分别为35 、 109 ，在溅射工艺中，采用富ti的tini合金靶( ti - 48at ni )而不是其它成分补偿措施，来增加tini薄膜中的ti含量。
6 ) after incomplete phase transformation in the tini thin film , two reverse transformations occur on the second heating , but it returns back to one reverse transformation again on the third heating . therefore , the incomplete phase transformation has no effect on the property of micro - actuator using tini thin film
不完全相变导致z薄膜第二次加热出观叹逆相变，但第三次逆相变又重新恢复为单一逆相变转变，因此对于tint薄膜微驱动器元件来讲，可以不考虑不完全相变对微驱动器元件性能的影响。