Lif acting as the electron inject layer can increase the luminous efficiency and decrease the operating voltage ; cupc acting as the hole inject layer can improve the device ' s stability , but at the same time , it will cause the reduction of brightness and efficiency Lif作为电子注入层,能够明显提高器件的发光效率,降低器件的工作电压; cupc作为空穴注入层能够使器件稳定性提高,但也导致了亮度和效率的下降。
Some gas - sensitive test to deoxidizing gas have carried out based on tio _ 2 films by sputtering and doped some impurity . the experimental results showed that tio _ 2 films have different electron injecting principle and reactive mechanism , the behaviors of gas - sensor for hydrogen and ethanol manifest dissimilitude . this is due to that the oxygen vacancies were compensated by the impurity 用溅射制备的薄膜掺入部分杂质对还原性气体进行气敏测试,发现tio _ 2薄膜对酒精气体和氢气有不同的反应机制和电子注入机理,气敏特性也表现出不同,而杂质的引入反而降低了tio _ 2薄膜的敏感性,可能是由于杂质对氧空位的补偿所引起。
This paper has five chapters : the first chapter : describing the evolution of the organic / polymeric electroluminescent device , analyzing its advantages and disadvantages when acting as flat display , introducing the oled structure , luminous mechanics and the methods of increasing the luminous efficiency , etc . the second chapter : discussing the effects on the performance of oled if the lif acts as an electron inject layer and / or cupc acts as a hole inject layer 本文共分五章:第一章:详细叙述了有机聚合物电致发光器件的研究进展,分析了其作为平板显示的优缺点,介绍了oled结构、发光原理和提高其效率的途径等。第二章:讨论了lif作为电子注入层, cupc作为空穴注入层对器件性能的影响。
电子: electron注入: pour into; empty into; inpou ...电子注入器: electron injector热电子注入: hot electron injection弹道电子注入: ballistic electron injection电子注: eb; electron beam; electronic beam单离子注入: single ion implantation反质子注入: antiproton injection离子注入: implantation, ion; ion implantation; ion injection离子注入层: ion implanted layer离子注入法: ion implantation; ion injection method离子注入机: ion implantation apparatus; ion implantation machine; ion implanter离子注入结: ion implanted junction粒子注入: particle injection磷离子注入: phosphorous ion implant硼离子注入: boron implantation载流子注入: carrier injection载子注入: carrier injection质子注入: protonation质子注入区: proton implanted region低能离子注入: low energy ion implantation分子离子注入: molecular ion injection高能离子注入: high energy ion implantation沟道离子注入: channel ion implantation离子注入掺杂: ion implantation doping