This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n-type . 这一电压在栅极氧化物层上产生一个电场,它导致毗邻的P型衬底转变成N型。
This voltage creates a field across the gate oxide , which causes the adjacent p substrate to invert to n - type 这一电压在栅极氧化物层上产生一个电场,它导致毗邻的p型衬底转变成n型。
A resistance macromodel for deep - submicron process epi - type substrate based on the 2d device simulation is presented 摘要提出了一种基于二维器件模拟的深亚微米工艺外延型衬底的电阻宏模型。