This work is based on the preparation , characterization , and processing of high - k materials ba0 . 8sro0 . 2tio3 thin film capacitor was deposited using mod technique with highly controlled precursor solution 采用封闭式回流系统和廉价的ba和sr的醋酸盐为前躯物成功制备了不同厚度的bst薄膜,观察了薄膜厚度对其电学性能的影响。