doping concentration是什么意思_doping concentration中文

doping concentration中文什么意思

掺杂浓度

dope: n. 1.浓液，黏稠物，胶状物；【航空】(涂机翼的)明胶 ...
concentration: n. 1.集中。 2.【化学】提浓，蒸浓，浓缩；浓度；稠 ...
low concentration doping: 轻微掺杂
doping: 半导体中的搀杂质; 掺杂质；加添加剂；上涂料; 掺杂质的搀杂质; 多平; 加入添加剂; 加涂料; 加元素; 禁药; 渗杂质; 使用兴奋剂; 涂布
concentration: n. 1.集中。 2.【化学】提浓，蒸浓，浓缩；浓度；稠密度；【矿物】汰选，选矿，富化。 3.集中注意，专心。 multi-stage ore concentration多段选矿法。 with deep concentration专心。

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On the base of the study on sige material physics characteristic , sige / si hetero - junction characteristic , we dissertate the advantage of sige / si hetero - junction power diodes and establish more accurately physical models and propose two novel kinds of fast and soft recovery p + ( sige ) - n - - n + hetero - junction power diodes : the one is p + ( sige ) - n " - n + diode with the multiplayer gradual changing doping concentration in the n - region , and the other is p + ( sige ) - n " - n + diode with ideal ohmic contact on the cathode interface
本文针对sige材料的物理特性、 sige si异质结特性建立了准确的物理参数模型。在详细论述了sige si异质结功率二极管良好特性的基础上，提出了两种快速软恢复sige si功率二极管新结构： n ~ -区采用多层渐变掺杂和阴极侧采用理想欧姆接触。
It also showed that doping concentration as well as the dopant itself had great influence on device character ; the el spectrum of devices indicated that the emitting sites in the doped devices shifted from alq molecules to the dopant and the current mechanism of the device was also changed when doping in the host
从能带结构来看，掺杂剂的引入相当于在发光层中引入了新的能级结构，这是掺杂后器件性能发生改变的根本原因；适当的掺杂剂和掺杂浓度能够大大提高器件性能（在20v直流电压驱动电压下获得了亮度为25000cd / m2的掺杂型有机el器件）。
Ohmic contacts on h2 - thermally - treated 6h - sic surface by evaporating aluminum without annealing have contact resistances of 8 10 - 3 - cm2 on room temperature and keep fairly good thermal stability under the temperature of 400 . its ohmic properties do n ' t depend on the doping concentrations of the substrate , which enables us to form ohmic contacts on low dropped substrate especially on epitaxial layer
通过氢气处理6h - sic表面并镀铝后直接形成的欧姆接触室温比电阻率达到8 10 ~ ( - 3 ) ? cm ~ 2 ，温度不超过400时该接触具有较好的稳定性，其欧姆特性不依赖于衬底的掺杂浓度，是一种适宜在低掺杂衬底特别是sic外延片上制备欧姆接触的有效方法。
On the base of these theory calculations , we passivated the front - surface both of different surface doping concentration solar cells by a thin layer of thermally grown sio2 . the results show that the in heavy surface doping concentration cell is lower compared to the cell in light surface doping concentration . the majority of improvement in comes from the emitter surface passivation
接着采用sio2作为钝化膜，从实验上比较了在不同表面浓度下单晶硅太阳电池的钝化效果，结果表明在高表面浓度下其开路电压比低表面浓度下的开路电压低，这开路电压的提高主要来源于降低了前表面复合。

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