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doping concentration中文什么意思

发音:   用"doping concentration"造句
  • 掺杂浓度
  • dope:    n. 1.浓液,黏稠物,胶状物;【航空】(涂机翼的)明胶 ...
  • concentration:    n. 1.集中。 2.【化学】提浓,蒸浓,浓缩;浓度;稠 ...
  • low concentration doping:    轻微掺杂
  • doping:    半导体中的搀杂质; 掺杂质;加添加剂;上涂料; 掺杂质的搀杂质; 多平; 加入添加剂; 加涂料; 加元素; 禁药; 渗杂质; 使用兴奋剂; 涂布
  • concentration:    n. 1.集中。 2.【化学】提浓,蒸浓,浓缩;浓度;稠密度;【矿物】汰选,选矿,富化。 3.集中注意,专心。 multi-stage ore concentration多段选矿法。 with deep concentration专心。
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  1. Then we grew the material with different active layer growth temperature , different v / ratio , different doping concentration and form . after that , we tested these materials by photoluminescence ( pl ) technology , and got the best growth condition according to the results of photoluminescence spectra . our result was that the active layer growth temperature was 700 , v / ratio was 60 , waveguide layer doping was gradual changed ( n - type doping with sih4 from 190sccm to 590sccm , p - type doping with dmzn from 90sccm to 490sccm )
    然后在不同的有源区生长温度、 /比、掺杂方式及浓度情况下对激光器材料进行外延生长,并利用光荧光( pl )技术对不同生长条件下外延材料的光致发光特性进行了测试对比,结果表明在下列条件下生长出来的材料具有更好的光学和电学性能:有源区生长温度在700 、波导层/比选择为60 、 n型波导渐变掺杂190sccm - 590sccm的sih _ 4 、 p型波导渐变掺杂90sccm - 490sccm的dmzn 。
  2. At the same time , we show that under a proper nitrogen doping concentration , due to the " concentration quenching " effect , the full spectrum of the nn3 center ( i . e . , its zero phonon line and various phonon replicas ) is revealed without the interference from the spectra of other higher energy centers ( especially nn4 - nn6 )
    Gapi . xn :的发光谱在低组分下由尖锐的nn 。线及其声子伴线组成,随着组分x的提高,这些尖锐的的谱线逐渐展宽,并向低能端移动,在这个过程中,激子的能量传输起着重要作用
  3. The seemingly mcnt content in pt can be controlled by repeating the coatings of the film and increasing the mcnt doped concentration of the sol . the heterogeneous nucleation at the interface between mcnt and pt was induced by the doption of mcnt . the films which were calcined at 500 ? had formed perovskite and large crystal content , means that perovskite formed at the lower temperature , in conclusion , the crystalline ability of pt was improved by the doption of tb and mcnt
    纳米碳管的引入,使得体系在纳米碳管和pt之间的界面产生非均态核化,随pt薄膜成核势垒的降低,掺纳米碳管的pt薄膜在较低温度下即可形成钙钛矿相,在500的较低温度,就可获得结晶完整且己具有很大结晶量的薄膜。
  4. On the base of the study on si / sige hetero - junction fast switching power diode , two kinds of novel structure of sige / si pin diode are proposed in abstract this paper . the one is the gradual changing doping concentration in the n - region , and the other is sige pin diode with mesa structure
    本文在对sige si异质结快速开关功率二极管的研究基础上,提出了两种sige si快速开关功率二极管的新结构: ?基区渐变掺杂型sige异质结开关功率二极管和台面结构sige异质结开关功率二极管。
  5. In order to prepare composites with the least dimerization , it is important to design and assemble the target mpc molecule with desired structure , such as peripheral or axial substitutional groups . the optical limiting effect of the composites is measured at 532nm with 8ns pulses . the influence of different mpc doped concentrations , central metal ions , substitutional groups , dimerization ratios , and matrix on the composites " optical limiting effect is studied
    在此基础上,应用光限幅测试技术,系统地研究了无机基金属酞菁复合固态材料的光限幅性能和金属酞菁配合物在复合体系中的光限幅机理,揭示了复合体系光限幅性能的酞菁浓度效应、中心离子效应、取代基效应和基质效应,为金属酞菁分子设计和复合制备工艺优化提供了可靠参考依据和可能。

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