Many gettering techniques have been widely studied to overcome this problem by removing metal impurities from active regions of device . one new gettering method that has recently received growing interest is the use of nanocavities resulting from helium or hydrogen implantation 所以需要减小有源区中金属杂质的浓度,通常采用吸除的方法把金属杂质从器件有源区吸收到有源区之外预先形成的sink (陷阱)中。
According the temperature distribution of the high power laser diode array , we design a high efficient water cooler to accelerate the conduction of heat with the circular water in the cooler in order to disperse the heat in the active region of a laser , so we can keep a constant operational temperature . by doing those and solving such problems , we can master the technology of gaining the high duty - cycle high power laser diode array , including the material growth , the making of a laser bar 通过对该项目进行研究,解决高占空比大功率半导体激光器阵列材料生长、管芯制作、器件制作等工艺难点,掌握高占空比大功率半导体激光器阵列的制作关键技术,将激光器工作的脉冲占空比提高到20 ,以适应泵浦nd : yag固体激光器的要求。
There are many approaches to achieve the purpose , and one of the perfect them is tunnel - cascaded multi - active regions large cavity ld structure , in which not only the effective thickness of the active region increase but also obtain lds ’ low threshold current and high slope efficiency and other properties 有多种途径实现ld光束特性的改善,其中采用多有源区隧道结级联大光腔结构的半导体激光器是既增加有源区等效厚度而又保证ld低阈值电流和高斜率效率等特性的最佳途径之一。
Metal impurities unintentionally introduced into si wafers during various device process steps are very harmful to device performances . many gettering techniques have been widely studied to overcome these problems by removing metal impurities from the active region of a device . reduction in device size and introduction of new moralization processes require more efficient gettering techniques working at lower temperatures 半导体工艺中无意引入的金属杂质的污染会极大损害器件性能,为了将金属杂质从器件的有源区吸除,吸杂技术被广泛的研究,器件尺寸的不断缩小和新的金属化工艺的不断出现更需要能在低温有效吸除的技术。
The heat sources are analyzed in theory and calculated under some hypothesis . a thermal conductive model is built and by solving the model equation , the numerical values of the 1 - active region laser , 2 - active region laser , 3 - active region laser and 4 - active region laser are obtained . the dynamical temperature distribution plots are obtained , too 在一定的假定条件下对其内部的热产生率进行了定量计算,并分别针对一、二、三、四有源区激光器建立了热传导模型,得出数值解,画出激光器内部瞬态温度分布图,推导了激光器连续工作条件。