By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia , silicon nitride thin film with excellent anti - reflective and passivation effects was prepared . the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated . the effects of substrate temperature , the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched 实验表明,氮化硅薄膜的沉积速率随硅烷氨气流量比增大而增大,随温度升高而略有降低,随淀积功率增大而明显增加;在衬底温度300 ,射频功率20w和硅烷氨气流量比为1 : 3的条件下氮化硅薄膜的沉积速率大约为8 . 6纳米分。
However , the refractive index will increase with the increase of the flow ratio of sifu / nhs , slightly increase with the increase of substrate temperate , and decrease with the increase of rf power . by measuring the passivation results of hydrogen plasma and sinx thin film , we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment , although it has little to do with the annealing temperature and time . the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon , but after annealing at high temperature the mobility turns down 通过测试氢等离子体钝化和氮化硅薄膜钝化的效果,实验还发现氢等离子体处理对多晶硅材料的少子寿命提高作用比较明显,但是这种提高作用与处理温度以浙江大学硕士学位论文王晓泉2003年5月及时间的关系不大;氨化硅薄膜中的氢对单晶硅的载流子迁移率提高有一定作用,但经过高温处理后这种作用消失;氮化硅薄膜能提高单晶硅和多晶硅的少子寿命,具有表面钝化和体钝化的双重作用;氢等离子体和氮化硅薄膜都能有效地提高单晶和多晶电池的短路电流密度,进而使电池效率有不同程度(绝对转换效率0