- 椭率测量术
- 椭圆对称法
- 椭圆对源
- 椭圆光度法
- 椭圆计测量
- 椭圆率测量术
- 椭圆偏光法
- 椭圆偏振计测量
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ellipsometry中文什么意思
例句与用法
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- The present article has two goals : first , the determination of the dependence of the complex refractive index of sige alloys on the ge concentration , and second , the demonstration of the application of in situ ellipsometry during rie for depth profiling of the ge content
本文有两个目标：第一，决定锗硅合金的复数折射率与锗浓度的关系，第二，验证得到锗浓度的纵向分布的rie同步椭偏测量的应用。 - The composition , structure , and properties of the as prepared composite films have been characterized in detail by uv - vis , ftir , and x - ray photoelectron spectra , ellipsometry , scanning electron microscopy , atomic force microscopy , transmission electron microscopy , fluorescence spectroscopy , and standard four - probe technique
采用uv - vis光谱、 ftir光谱、 x -射线光电子能谱、椭圆光度法、扫描电子显微镜、原子力显微镜、透射电子显微镜、荧光光谱和标准四探针技术对所制备的纳米复合膜进行了组成、结构和性能表征。 - Biology , etc . owing to many merits has not yet been used to measure parameters of gratings . the paper researches on the subject in view of current lack of it . the main tasks of the paper include : analyzing ellipsometric characteristics of gratings in detail with vector diffraction theory and ellipsometrics ; devising a reflective quarter wave plate at normal incidence according to some ellipsometric characteristics ; making use of normal simplex algorithm during ellipsometric inversion of gratings parameters , inversing ellipsometric parameters with gaussian noise of different standard deviations to simulate actually measured values with examples of isotropic metallic and anisotropic step gratings and testing that ellipsometry about gratings parameters is feasible with the range of certain precision ; discussing choice of incidence angle at length
本论文的主要工作包括：结合光栅的矢量衍射理论和薄膜的椭偏理论，详细分析了光栅的椭偏特性；并且根据一些椭偏特性设计出一款正入射反射型单波长1 4波片；在光栅参数的椭偏反演中，引入正单纯形法作为反演算法，分别以各向同性的正弦形金属光栅和各向异性的阶梯型光栅为例，在标准椭偏值的基础上加入不同偏差的高斯噪声来模拟实际的椭偏测量值进行反演，在一定精度范围内得出满意的光栅参数，说明光栅参数的椭偏测量是可行的；还就入射角的选取问题进行了一定的探讨。 - For xrd , ellipsometry examinations , single - side - polished si ( lll ) wafers were used as substrates and for resistance measurement , glass was used and for infrared examination , double - side - polished si ( lll ) wafers were used and for ultraviolet - visible spectrophotometry , double - side - polished quartz wafers were used and for tem micrograph and electron diffraction pattern observation , cu nets deposited by formvar film were used . the cu - mgf2 cermet films were from 50 to 600nm thick
用于xrd分析、椭偏测量的单抛si ( 111 )晶片和电阻测试的载玻片上淀积膜厚约为600nm ；用于ir测试的双抛si ( 111 )晶片和uv测试的石英玻璃片上淀积膜厚约为250nm ；用于透射电镜分析的样品则淀积在400目铜网上的支撑formvar膜上，膜厚约为50 100nm 。 - The structure properties of a - sinx : h are characterized and analyzed by using ellipsometry , fourier transform infrared ( ftir ) spectroscopy and x - ray photoelectron spectroscopy ( xps ) , all the results suggest that the films with the structure of silicon dots / clusters embedding in silicon nitride matrix can be obtained by controlling the hwp - cvd conditions properly
利用椭偏仪，傅立叶红外吸收谱( ftir ) ， x射线光电子能谱( xps )等技术对a - sin _ x ： h的结构特性进行了表征与分析，结果表明，采用hwp - cvd技术合理控制实验条件，可得到镶嵌在sin _ x中的纳米si结构薄膜。
百科释义
Ellipsometry is an optical technique for the investigation of the dielectric properties (complex refractive index or dielectric function) of thin films.
详细百科解释