This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition . we use the raman spectrum , ft - ir , afm and so on to study the dlc film . the result indicates : different bias voltage , frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films , we find high bias voltage , low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd 研究结果表明:在全方位离子注入技术中,不同的偏压、频率、气体流量都对薄膜中sp ~ 3键比例有所影响,文中对具体的影响进行了分析,发现偏压的增加、频率的降低和适中的气体流量可以制备出sp ~ 3键比例高的类金刚石膜;在等离子增强化学气相沉积技术中,对偏压对sp ~ 3键比例的影响也进行了简单分析。
( ii ) charging effects on temporal and spatial evolution of dusty plasma sheath in plasma source ion implantation . the temporal and spatial evolution of a dusty plasma sheath in plasma source ion implantation has been investigated with a fluid theory and a self - consistent dust - charging model . a negative potential pulse is introduced to form the plasma sheath ( )尘埃粒子的充电效应对等离子体源离子注入( ps )鞘层时空演化的影响采用流体模型及自洽的尘埃粒子充电模型,我们研究了等离子体源离子注入时的尘埃等离子体鞘层的时空演化。