Based on the above work , the optical absorption and photoluminescence ( pl ) properties of a - sinx : h films with different compositions are studied through ultraviolet - visible spectroscopy ( uv - vis ) and time - resolved photoluminescence ( tr - pl ) , the dependence of pl intensity decay on emission photon energy is found , the luminescence mechanism of nanosilicon embedded in silicon nitride matrix is presented , finally , the effective approaches to improving the luminescence efficiency of a - sinx : h films are discussed 在此基础上,通过紫外-可见光谱( uv - vis )技术,时间分辨光致发光谱技术研究了不同组分的富硅a - sin _ x : h薄膜的光吸收和光辐射特性,得到了材料光致发光衰减和辐射光子能量之间的关系,提出了镶嵌在氮化硅中的纳米硅的发光机制,进而探讨了提高纳米硅薄膜发光效率的有效途径。
Semiconductor luminescence materials and devices were developed as one of semiconductor technology in 1960 . the luminescence devices made with the materials had developed quickly . but the pure semiconductor materials could not better because the luminescence efficiencies were lower . doping is very important in order to improve the luminescence efficiency 半导体发光材料和器件是六十年代发展起来的半导体技术中的一个分支,单一的纯净本征半导体的性能往往不能满足实际的需要,发光效率或发光几率低,发光强度弱,提高发光效率的有效途径就是进行材料的掺杂改性。