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higher-field中文什么意思

发音:   用"higher-field"造句
  • 较高场
  • higher:    adj. 〔high 的比较级〕较高的;高等的。 hig ...
  • field:    n. 1.原野,旷野;(海、空、冰雪等的)茫茫一片。 2 ...
  • higher-field superconducting magnet:    较高场超导磁体,次高场超导磁体
  • higher:    adj. 〔high 的比较级〕较高的;高等的。 higher command 【军事】= high command. higher criticism 圣经考证学。 higher education 高等教育。 higher mathematics 高等数学。 on a higher plane 在更高水准上。
  • higher and:    higher高升; higher越来越好
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例句与用法

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  1. For the requirement of more negative differential resistance ( ndr ) routes , three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition , and high - field domain in the superlattice is formed under sufficiently large operation bias
    为获得?多轨迹的负微分电阻,本研究组件使用?相当薄之砷化铟镓?子井,可使四周期磷化铟/砷化铟镓超晶格结构在平带情况下形成三个分?的?子化能阶,且于足够大的操作偏压下在该超晶格结构中形成?高场区域。
  2. Based on the transferred - electron theory of the iii - v compound semiconductor and the research on the lock - on effect of the si - gaas pcss ' s , this paper proposes the monopole charge domain model similar to the guun or high - field domain to explain the peculiar switching phenomena occurring in the lock - on mode theoretically
    本文基于gaas等?族化合物半导体的转移电子理论,结合半绝缘gaas光电导开关中特有的lock - on效应的研究,提出了类似于耿畴(高场畴或偶极畴)的单极电荷畴理论模型,对光电导开关lock - on效应的各种现象给出了理论解释。
  3. In addition , the breakdown and the degeneration of pcss " s are serious problems in the applications . in this dissertation the mode of luminous charge domain is perfected ulteriorly by deeply studying the dynamics characteristic of high - field domain of the trans - electron device with experiment stability of nonlinear pcss
    本文在通过对转移电子器件偶极畴的动力学特征作了深入分析的基础上,结合非线性pcss ' s的稳定性实验,对非线性pcss ' s的光激发电荷畴理论模型作了进一步的完善。
  4. In order to investigate the effect of high - field hot - carrier on devices and circuits , the electrical stress experiment is carried out with 1 . 2 n m , 1 . 0 n m and 0 . 8 u m channel length home - made mosfet ' s by the monitor system with ate and cat technology . by using the fresh and degraded experiment data , bsim2 model parameters are extracted
    为了分析研究高场热载流子效应对器件和电路特性可靠性的影响,采用自动测试与cad技术相结合的监测系统,对国内沟道长度1 . 2 m 、 1 . 0 m和0 . 8 m的mosfet进行了电应力退化实验,并根据实验结果提取了退化前后器件的bsim2模型参数。

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