- 电子陷阱
- electron: n. 【物理学】电子。 the electron bea ...
- traps: 〔pl.〕 n. 1.随身携带物；行李。 2 ...
- s traps: 形存水弯
- traps: 〔pl.〕 n. 1.随身携带物；行李。 2.家具。 3.什物。
- steam traps and air traps: 蒸汽疏水阀和空气疏水阀
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electron traps中文什么意思
- 电子陷阱
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例句与用法
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- The luminescence theorem of aluminates strontium is studied , too . ce transfers energy to tb in ce and tb co - activated phosphors . light emission of phosphors is led by 4f - 4f - electron leap of tb ; its long lasting persistence is related to electron traps in sraljo , host lattice
铆对锚有能量传递和敏化作用，该磷光体的光发射是锨的4f 4ffh于跃迁发射的结果：其余辉特性与铝酸锯晶格的电子陷阶等有关。 - The total number of defects induced by electron irradiation in 4h - sic is calculated theoretically . the deep level defect of eh6 / eh7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps
在辐照的位移效应方面：从理论上对电子辐照在4h - sic中引入的缺陷数量和各种缺陷能级进行了计算和分析，其中只有eh6 / eh7缺陷能级在sic中起着有效的复合中心的作用。 - To analysis the principle of degradation and destruction , a reasonable relationship between the electrostatic potential and 1 - v characteristic parameters is raised ; a computation model for electron trap effect is originally proposed , which leads to a conception of critical trap electron density
本文首次建立了晶界势垒高度与伏安特性参数之间的关系，提出了陷阱效应在冲击老化过程的作用模型，引入了“临界陷阱电荷密度”的概念。 - We found the " forward stimulated raman scattering " will be excited if the pulse length is greater than plasma wave length . the " forward stimulation raman scattering " decreases the phase velocity and the amplitude of the wake wave which will lead to the reduction of maximum kinetic energy of the electrons trapped
结论是：当脉冲长度接近等离子体波长时，稀薄等离子体将发生“前向受激raman散射” ，它使脉冲后沿拉长，导致尾流场的相速度变小，以至于被尾流场“捕获”的电子最大动能大大下降。 - The systematically study of the preparation of alkaline earth sulfide system doped with rare earth and its optical storage properties not only expand new synthesize technology of electron trapping optical storage materials but also afford basis for improving materials properties and application in different application fields
稀土掺杂硫化物体系的制备及其光学性能的系统研究，不但为电子俘获型光存储材料拓展了新的合成技术，也为进一步提高材料的性能及其在不同领域的应用提供了依据。