atomic ratio中文什么意思

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用"atomic ratio"造句

原子比

atomic: adj. 1.原子的。 2.极微的。 3.强大的。
ratio: n. (pl. ratios) 1.比，比率，比值；比例 ...
atomic moderation ratio: 原子慢化比
atomic ratio of moderator to fuel: 原子慢化比
gram-atomic ratio: 克原子比

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When sulphurisation time is 30 minutes and sulphurisation temperature change from 180 to 240 , the atomic ratio s / sn of the films increases from 0 . 72 to 1 . 08 and energy gap of the films increases from 1 . 44ev to 1 . 48ev with the increasing of the sulphurisation temperature
当硫化时间为30分钟硫化温度在240 ~ 310之间变化时,薄膜的s / sn值随着硫化温度的升高从1 . 08上升到1 . 96 ,能带间隙随着硫化温度的升高从1 . 01ev上升到1 . 72ev 。
The results are as follows : as the sputtering pressure increases , the atomic ratio of o to ti increase in the films , which is attributed to the fact that the absolute oxygen content increases , as the pressure increases despite the ratio of 62 to ar remains unchangless
结果发现：在氧气、氩气分压比不变的条件下，薄膜表面o和ti原子比增大，这可能是由于溅射气压增大，而氧气与氩气比未变，真空室中氧气的绝对含量增加，参加反应的氧原子数增加的缘故造成的。
When the atomic ratio of nb is one , the structure is homogeneous and almost composed of the single sm2fe17 phase . it ' s nearly the same structure as that after annealing . so it can reduce the production cost and increase the stability of magnetic properties
当nb的原子比为1时的铸态组织基本为均匀的接近单相的sm _ 2fe _ ( 17 )组织，已接近于退火后的组织，从而可以避免冗长的均匀化退火化过程而直接用于制造永磁体，极大的降低了生产成本，并能有效的提高磁性能的稳定性。
A detailed analysis of the electrical properties of ato thin films was carried out in order to investigate the sb / sn atomic ratio and substrate temperature ' s influence on the ato thin film . a convictive explanation brought forward to illustrate the changing of the electrical ； properties of the ato thin film in different conditions
在温度较低时( < 500 ) ，薄膜的方块电阻随成膜温度的升高而降低；当基板温度继续升高，薄膜的方块电阻随基板温度的升高而增大，这主要是因为玻璃基板中k ~ + 、 na ~ +离子向薄膜中的扩散。
Surface states and the topmost surface atoms of the batio3 thin films have been analyzed by x - ray photoelectron spectroscopy ( xps ) and angle - resolved x - ray photoelectron spectroscopy ( arxps ) . the results show that the as - grown batio3 thin films have an enriched - bao nonstoichiometric surface layer which can be removed by ar + ion sputtering , and the atomic ratio of ba to ti decreases with increasing the depth of ar + ion sputtering
用x射线光电子能谱技术( xps )和角分辨x射线光电子能谱技术( arxps )研究了薄膜的表面化学态以及最顶层原子种类和分布状况,结果显示在热处理过程中薄膜表面形成一层富含bao的非计量钛氧化物层,并且钡-钛原子浓度比随着探测深度的增大而逐渐减小。